Investigation of plasma species, etch products and surface modification during etching of Ge, Sb and Se-based materials in CH4-H2-Ar plasmas - PCM
Communication Dans Un Congrès Année : 2023

Investigation of plasma species, etch products and surface modification during etching of Ge, Sb and Se-based materials in CH4-H2-Ar plasmas

Résumé

Organometallic positive ions were identified in inductively coupled plasmas by means of mass spectrometry during the etching of Ge-Sb-Se materials in CH4-H2-Ar mixtures. Observation of polymetallic species (Mx-R, M = Ge, Sb, Se, x > 2, R = Hy or CHz) points out that recombination reactions occur in the plasma. Correlation with x-ray photoelectron analysis, showing the presence of C-M moieties indicates that chemical etching processes take place.

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Dates et versions

hal-04675788 , version 1 (22-08-2024)

Identifiants

  • HAL Id : hal-04675788 , version 1

Citer

T Meyer, A Girard, M Bouska, E Baudet, M Baillieul, et al.. Investigation of plasma species, etch products and surface modification during etching of Ge, Sb and Se-based materials in CH4-H2-Ar plasmas. 25th International Symposium on Plasma Chemistry (ISPC25), Takayuki Watanabe - Kyushu University; Satoshi Hamaguchi - Osaka University, May 2023, Kyoto, Japan. ⟨hal-04675788⟩
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