Investigation of plasma species, etch products and surface modification during etching of Ge, Sb and Se-based materials in CH 4 -H 2 -Ar plasmas - PCM
Poster De Conférence Année : 2023

Investigation of plasma species, etch products and surface modification during etching of Ge, Sb and Se-based materials in CH 4 -H 2 -Ar plasmas

Résumé

Plasma etching of Ge-Sb-Se materials in methane-based mixtures for photonic applications and advanced microelectronics.

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Dates et versions

hal-04675793 , version 1 (22-08-2024)

Identifiants

  • HAL Id : hal-04675793 , version 1

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Thibaut Meyer, Aurélie Girard, Christophe Cardinaud, Marek Bouška, Emeline Baudet, et al.. Investigation of plasma species, etch products and surface modification during etching of Ge, Sb and Se-based materials in CH 4 -H 2 -Ar plasmas. 25th International Symposium on Plasma Chemistry (ISPC25), May 2023, Kyoto, Japan. ⟨hal-04675793⟩
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